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What is dopant process?

o Doping

process is adding some impurity atoms in the semi conductor.These impurity atoms are known as dopants. After addition of these dopants some of the properties of the conductors can be changed according to our need.

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Basic conditions for the dopant process :1.

The atom which is to be doped in the crystal must be placed at the position same as that of the position of the semiconductor atom. There should be no distortion in the crystal after the insertion of the dopants. The size of the dopants should be exactly same as that of the size of the atom of the crystal.
3/5/12 In a crystal the percentage of doping

2.

3.

4.

Dopant Diffusion physics

vSilicon

is a column IV element this means there

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Dopant Diffusion physics

v In

the periodic table, the closer elements are to each other, the more similar they are. So the best candidates would come from column V (which have five outer shell electrons). The element closest to silicon in column V is phosphorus. phosphorus is inserted into the silicon wafer in a certain way, it will take the place of a silicon 3/5/12 atom and bond with its four

v If

Dopant Diffusion physics

v

Extending this idea of inserting an element with a different number of valence electrons, a column III element (such as boron) could be added to the silicon wafer. In this case, the boron will try to bond with four silicon atoms, but it only has three electrons to bond with. This means there is an incomplete bond with one of the silicon atoms a hole where an electron3/5/12 would normally be. This hole behaves much like an

Dopant Diffusion physics

v Now

for the interesting part when n-type silicon comes into contact with p-type silicon. A built-in potential (voltage) develops that must be overcome before current can flow from the n-type to p-type regions. of carriers as being able to only move across a flat surface or 3/5/12

v Think

Dopant Diffusion physics

v When

n-type silicon is brought into contact with p-type silicon (a pn junction), current can flow in only one direction. This is the fundamental semiconductor device a pn junction diode a one way switch for current. devices used in integrated circuits are specialized combinations of pn junctions. 3/5/12

v The

Dopant Diffusion - Predep

v The

goal of the dopant predeposition diffusion is to move dopant atoms from a source to the wafer, and then allow the dopants to diffuse into the wafer. source of dopant can be in several forms solid (boron nitride and phosphorus oxide ceramic discs), liquid (boron tribromide and POCl3), or gas (diborane or phosphine). 3/5/12

v The

PREDEP

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Dopant Diffusion - Drive

v After

the predeposition diffusion the dopants are situated close to the surface of the wafer. However, they must diffuse even farther to lower the overall concentration in order for some of the devices to work properly. first diffusion (predeposition) introduces dopants into the wafer.
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v The

DRIVE

100mm diameter wafer fabricated in the ECE444 laboratory following boron predeposition, boron drive, and reoxidation.

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