TOSHIBA 25)334 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L?-n-MOSV) 283334 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE Uni [APPLICATIONS ator. water aye 6 ue Drie EAP © Low Drain-Source ON Resistance: Rpg (ON)=29m2 (Typ.) 3 3 High Forward Transfer Admittance : [Yf|=23S (Typ.) “Je © Low Leakage Current : Ipgg=—100/A (Max.) (Vpg=—60V) | © Enbancement-Mode : Vih=-0.8~-2.0V erssoss (Vps=—10V, Ip=—1mA) vuesans MAXIMUM RATINGS (Ta = 25°C) 3 cxanacrensnie | SRO hee Drain-Gate Voltage (RGS Voor | —60 v 2 DRAIN (Gave-Souree Voltage Yoss E20 v 3._souRce |JEDEC = : DC 1p =30) A Drain Current Pane} top sa Setar Sc67 Drain Power Dissipation (Te=25°O) | Pp 46 w [TOSHIBA 2:10R1B Single Pulse Avalanche Enorgy** | EAS 36 | mg_| Weight : 1.98 ‘Avalanche Current TAR =30 A Repetitive Avalanche Energy FAR 45 | mi Channel Temperature Toh 150 °C Storage Temperature Range Tae | —55~150 | °C THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL |MAX,| UNIT [Thermal Resistance, Channel to Case Ren (eho) | 2.78 [°C/W] [Thermal Resistance, Channel to Ambient | Ryh (cha)| 62.5 [°C/W Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. Vpp=—50V, Teh=25°C, L=747pH, RG=250, TAR=—30A This transistor is an electrostatic sensitive device. Please handle with caution, sso © Turton Grates othe ng eect Sautety ar wll po teen W's oe spear of th bape brag PERU Rasen eatSb of eg at's llf satin cd Paterno Le PS PO ea tle ek sepa He hey ate ae Sethe Sa en ed AE cad ah Se iter ead reser ym» an fr in arto oo rod, Neem (DieraTn fo ty ngerares 6 welecusl eety3 Su eked ee Batis meh may Ses Hom hs Ul. Tech's game «a Fh itermation comand herin i tanjct fo thang! wire een "osTBA CORPORATION oF mrs 7958-01-14 15TOSHIBA 25)334 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | SYMBOL ‘TEST CONDITION man. | Typ, |max.| UNIT| Gate Leakage Current Toss _|Vas=#16V, Vps=0V — [= | iol pa Drain Cut off Current Inss __|Vps=—60V, Vas=0V = F-ao0 | aa Drain-Source Breakdown Veltage IV (BR) Dss|1D=-10mA, Vgg=0V -60| — | — Gate Threshold Voltage Vin _|Vpg==10V, Ip=—1mA. =08 | — | -20 : . Vas= —4V, Ip=—15A — | 46| 60 Drain-Source ON Resistance [Rj mo DS(ON) [Vog=—10V, Ip=—15A — | 29[ 38 Forward Transfer ‘trance Wr [Vpg=-10V, Ip=—-15 ua} as] — | 8 Hinput Capacitance Gis = | s300[ — Reverse ‘Iransfer Vpg=-10V, Vag=0V Capacitance Cros |e=1Mne — | | — | [Output Capacitance Coss — | aas0[ — Rise Time ty Vas — |} 2%} — Switching [TUR Time | ton — | 2} - Time ne Fall Time te — | a5} — oft Ti VIN ¢ try tr : i ensounee vue Ys i wh cooesocenvunict Yos © [¥ts| — ID 5 : * & DRAIN CURRENT Ip (A) DRAIN CURRENT ip DRAIN SOURCE VOLTAGE Vos D2AINSOURCE ON RESISTANCE "ioscan 8) 1p - Vos Tea25C DRAINSOURCE VOLTAGE Vp «> ps ~ Vos GATESOURCE VOLTAGE Ves «) Rps(on) - 1D 09; a DRAIN CURRENT Ip ca) 7958-01-14 3/5TOSHIBA 253334 ps ow) ~ Te "br - Vos, oy 10 ‘COMMON SOURCE 2 | gunn 5 2 neo RUE 2 x 2 fe 5 = g 5g a es i g 2-3 2 gq Woe 100 : i =f |vcoea. we CASE TEMPERATURE Teo DRAINSOURGE VOLTAGE Vos «) CAPACITANCE ~ ¥; Vey = Te 10006 DS. = WB th g counon soc 4 Soonce ax : 8 7 mH 5 2 § *coannos i 5 x E a a a ss es =o 20 160 DRAINSOURCE VOLTAGE pg. > CASE TEMPERATURE. Te 0) DYNAMIC INPUT/OUTPUT Pp - Te . GuARAChisrics 7 "er ounox é = | Soom > & Bs 4 n & & z g a s 8 4 5 2 g 2 5 ‘ i a (CASE TEMPERATURE Te ¢C) TOTAL GATE CHARGE Q, (20) 7998-01-14 4/5TOSHIBA IN CURRENT tp NO ERE Se aneko. SINGLE PULSE 10077 ‘SAFE OPERATING AREA iy MAX. PULSED) sof {CONTINUOUS -s - 25 1% SINGLE “ox NONREPENTIIVE PULSE. AUncaly with Ssercae bt c a r Ys MAX. e018 253334 EAS Teh 0 = HP. cause: ToMPERATIM Yak Bynss ‘Test CIRCUIT =2501 paged WAVE FORM + ¢__BUDss 1 Giepss-Vop? 7998-01-14 5/5