NjbW

IPD50R520CP

CoolMOSTM Power Transistor

Product Summary

Package
V *EL;HI<?=JG; E<C ;G?I0 IH M / Y
V3 B
IG
7 BEL =7I; 9
>7G=;

V"1 9N\_Si

//*

R>M#a`$&_Si

*(/,*

"

+-

`=

QY&ejb

V # MIG;C ; : K : IG7I;:
V & ?=> F;7A9
JGG;DI9
7F78?B
?IN
V . 8<G;; B;7: FB7I?D= 0 E& 1 9
EC FB?7DI; available in Halogen free mold compounda)
V / J7B
!<?;:        
          79
9
EG
: ?D= IE ( # "# !+$

JA'NI,/,

CoolMOS CP is designed for:

V & 7G:   1 E<IHL?I9
>?D= 1 + . 1 IEFEB
E=?;H
V "!+ . $ ! <EG *7C F 87BB
7HI
V . 5 + <EG *7C F 7BB
7HI
. ". 7D: *!" 24
Type

Package

Marking

CJ>/*L/,*=J

JA'NI,/,

/L/,*J

Maximum ratings, 7IT \   Y!

JDB;HH EI>;G
L?H; HF;9
?<?;:
Parameter

Symbol Conditions

!EDI?DJEJH : G7?D 9
JGG
;DI

I>

Value

T =   Y!

1&+

T =    Y!

.&/

,$
. JB
H;: : G7?D 9
JGG
;DI

I >&bf^dW

T =   Y!

+/

 K7B
7D9
>; ;D;G=N
H?D=B
; FJB
H;

E ;M

I >   
V >>   4

+00

 K7B
7D9
>; ;D;G=N
G;F;I?I?K;t ;L,$&-$

E ;L

I >   
V >>   4

*&,/

 K7B
7D9
>; 9
JGG;DI
G;F;I?I?K; t ;L,$&-$

I ;L

+ - 1 $ # 2 : v )Vt GJ==;: D;HH

: v )Vt

% 7I; HEJG
9
; KEB
I7=;

V AM

. EL;G: ?HH?F7I?ED

P eae

- F;G7I?D= 7D: HIEG

7=; I;C F;G
7IJG
;

T \
T deY

a)

Unit
;

_D

,&/

V >M     4

/*

P)`d

deSe[U

v,*

 ! f   & O

v-*

T =   Y!

00

     

u=

non-Halogen free (OPN: IPD50R520CPBT); Halogen free (OPN: IPD50R520CPAT)

0 ;K 2.1
 

F7=; 

       
2013-07-31

IPD50R520CP
Maximum ratings, 7IT \   Y!
JDB;HH EI>;G
L?H; HF;9
?<?;:
Parameter

Symbol Conditions

!EDI?DJEJH : ?E: ; <EGL7G: 9

JGG;DI

IM

Value

Unit

-&2

T =   Y!

"?E: ; FJBH; 9
JGG
;DI,$

I M&bf^dW

+/

0 ;K;G
H; : ?E: ; : v )Vt .$

Vv )Vt

+/

P)`d

Parameter

Symbol Conditions

Values

Unit

min.

typ.

max.

'

'

+&3

^WSVWV

'

'

0,

  C C     ?D
<GEC 9
7H; <EG  H

'

'

,0*

u=

/**

'

'

Thermal characteristics
2>;GC 7BG;H?HI7D9
;
@JD9
I?ED  9
7H;

R eZD=

2>;GC 7BG;H?HI7D9
;
@JD9
I?ED 
S_T[W`e

R eZD;

1 EB: ;G?D= I;C F;G7IJG;

T da^V
L7K;HEB: ;G?D= EDB
N 7B
BEL;: 7IB;7: H

E)Q

Electrical characteristics, 7IT \   Y!

JDB;HH EI>;GL?H; HF;9
?<?;:
Static characteristics
> 7?
"G
[DHEJG
9
;T
8G;7A
]V
: ELD KEB
^eI7=;

V #<L$>MM V AM7*
*P
P
I >7,/*
,/* w;
[;

% 7I; I>G;H>EB
: KEBI7=;

V AM#eZ$

V >M7V AM
I >    C 

,&/

-&/

6;G
E =7I; KEB
I7=; : G7?D 9
JGG
;DI

I >MM

V >M    4
V AM  4

T \   Y!

'

'

V >M    4
V AM  4

T \    Y!

'

+*

'

w;

% 7I;HEJG9
;B
;7A7=; 9
JGG
;DI

I AMM

V AM   4
V >M  4

'

'

+**

`;

"G7?DHEJG
9
; EDHI7I; G;H?HI7D9
;

R >M#a`$

V AM   4
I >   

T \   Y!

'

*&.1

*&/,

"

V AM   4
I >   

T \    Y!

'

+&,

'

f   + & O
EF;D : G7?D

'

,&,

'

% 7I; G;H?HI7D9
;

0 ;K 2.1


RA

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2013-07-31
      

IPD50R520CP
Parameter

Values

Symbol Conditions

Unit

min.

typ.

max.

'

02*

'

'

-+

'

'

,3

'

Dynamic characteristics
'DFJI9
7F79
?I7D9
;

C [dd

- JIFJI9
7F79
?I7D9
;

C add

# <<;9
I?K; EJIFJI9
7F79
?I7D9
;
;D;G
=N
C a#Wc$
0$
cW^SeWV

V AM  4
V >M    4

f  + & O

b@

V AM  4
V >M  4
IE    4

# <<;9
I?K; EJIFJI9
7F79
?I7D9
;
I?C ;
1$
cW^SeWV

C a#ec$

'

0-

'

2JG
DED : ;B
7N I?C ;

t V#a`$

'

-/

'

0 ?H; I?C ;

tc

'

+.

'

2JG
DE<<: ;B
7N I?C ;

t V#aXX$

'

2*

'

$ 7B
BI?C ;

tX

'

+1

'

% 7I; IE HEJG9
;9
>7G=;

Q Yd

'

'

% 7I; IE : G7?D 9
>7G
=;

Q YV

'

'

% 7I; 9
>7G
=; IEI7B

QY

'

+-

+1

% 7I; FB7I;7J KEB

I7=;

V b^SeWSf

'

/&,

'

'

*&3

+&,

'

,.*

'

`d

'

+&0

'

w=

'

+-

'

V >>    4

V AM   4
I >   

R A    "

`d

% 7I; !>7G=; !>7G79

I;G?HI?9
H

V >>  **
  4 &
I >  2  &

V AM  IE   4

`=

Reverse Diode
"?E: ; <EGL7G
: KEBI7=;

V M>

0 ;K;G
H; G;9
EK;GN I?C ;

t cc

0 ;K;G
H; G;9
EK;GN 9
>7G=;

Q cc

. ;7AG;K;G
H; G;9
EK;GN 9
JGG
;DI

I cc_

V AM  4
I @   

T \   Y!

V L    4
I @7I M

Vi @)Vt      [ H

+$

( 1 2"  7D: ( # 1 " 

,$

. JB
H; L?: I> t b B
?C ?I;: 8N T \&_Si

-$

0 ;F;I?I
?K; 7K7B7D9
>; 9
7JH;H 7: : ?I?ED7BFEL;GBEHH;H I
>7I9
7D 8; 9
7B
9
JB
7I;: 7H P ;P7E ;L%f.

.$

I M>"I >
: i )Vt "    [ H
V >=^[`]    4
V bWS]6V #<L$>MM
T \6T \_Si
?: ;DI?9
7BB
EL 7D: >?=> H?: ; HL?I9
>

/$

C a#Wc$ ?H 7 <?M;: 9
7F79
?I7D9
;I
>7I=?K;H I>; H7C ; HIEG;: ;D;G=N 7H C add L>?B; V >M ?H G?H?D= <GEC  IE    V >MM(

0$

C a#ec$ ?H 7 <?M;: 9
7F79
?I7D9
;I
>7I=?K;H I>; H7C ; 9
>7G=?D= I?C ; 7H C add L>?B; V >M ?H G?H?D= <GEC  IE    V >MM(

0 ;K 2.1
 

F7=; 

2013-07-31
       

IPD50R520CP
1 Power dissipation

2 Safe operating area

P eae7X#T =$

I >7X#V >M T =   Y! D 7*

F7G7C ;I;G
 tb
102

70

60
B?C ?I;: 8N EDHI7I;
cWd[deS`UW
 [H

50

 [H

40

 [H

ID [A]

Ptot [W]

101

 C H

30
 C H

100
>=

20

10

10-1

0
0

25

50

75

100

125

150

100

175

101

TC [C]

102

103

VDS [V]

3 Max. transient thermal impedance

4 Typ. output characteristics

R#eZD=$7X#eb

I >7X#V >M T \   Y!

F7G7C ;I;G
 D=t b)T

F7G7C ;I;G V AM

101

20
 4

 4

 4

15
*(/

100

 4

ID [A]

ZthJC [K/W]

*(,
*(+
*(*/

 4

10

*(*,

10-1

*(*+

  4

H?D=B;FJBH;

5
 4

  4

10-2

0
10-5

10-4

10-3

10-2

10-1

100

tp [s]

0 ;K 2.1


10

15

20

VDS [V]

F7=; 

       
2013-07-31

IPD50R520CP
5 Typ. output characteristics

6 Typ. drain-source on-state resistance

I >7X#V >M T \    Y!

R >M#a`$7X#I > T \    Y!

F7G7C ;I;G
 V AM

F7G7C ;I;G V AM
2

12

 4

  4

 4

1,9

 4

10

 4

 4

 4

1,8

 4
 4

1,7

  4

RDS(on) [ ]

ID [A]

  4

1,6
1,5

 4

1,4

1,3

  4

2
1,2
1,1

0
0

10

15

20

25

VDS [V]

10

12

14

ID [A]

7 Drain-source on-state resistance

8 Typ. transfer characteristics

R >M#a`$7X#T \ I >     V AM   4

I >7X#V AM PV >Ml8,lI >lR >M#a`$_Si

F7G7C ;I;G T \

1,4

25

1,3
  Y!

1,2
20
1,1

15

0,9

ID [A]

RDS(on) [ ]

0,8
0,7

   Y!

10

 
ejb

0,6
0,5

5
0,4
0,3
0,2

0
-60

-20

20

60

100

140

180

Tj [C]

0 ;K 2.1


10

VGS [V]

F7=; 

       
2013-07-31

IPD50R520CP
9 Typ. gate charge

10 Forward characteristics of reverse diode

V AM7X#Q YSeW I >    FJB

H;:

I @7X#V M>$

F7G7C ;I;G
 V >>

F7G7C ;I;G T \
102

10
9
8

   Y!

 4

  Y!
  
   Y!
  

101

  Y!

 4

IF [A]

VGS [V]

6
5
4
100
3
2
1
10-1

0
0

10

15

0,5

Qgate [nC]

1,5

VSD [V]

12 Drain-source breakdown voltage

E ;M7X#T \ I >     V >>   4

V <L#>MM$7X#T \ I >    C 

175

580

150

560

125

540

VBR(DSS) [V]

EAS [mJ]

11 Avalanche energy

100

75

520

500

50

480

25

460

440
25

75

125

175

Tj [C]

0 ;K 2.1
 

-60

-20

20

60

100

140

180

Tj [C]

F7=; 

2013-07-31
      

IPD50R520CP
13 Typ. capacitances

14 Typ. Coss stored energy

C 7X#V >M V AM  4  f   + & O

E add= X(V >M)

104

=[dd

Eoss [J]

C [pF]

103

102
=add

101

=cdd

100

0
0

100

200

300

400

500

VDS [V]

0 ;K 2.1


100

200

300

400

500

VDS [V]

F7=; 

2013-07-31
      

IPD50R520CP
Definition of diode switching characteristics

0 ;K 2.1


F7=; 

2013-07-31
      

IPD50R520CP
PG-TO252-3-1/PG-TO252-3-11/PG-TO252-3-21 (D-PAK)

0 ;K 2.1


F7=; 

2013-07-31
       

IPD50R520CP
Published by
Infineon Technologies AG
81726 Munich, Germany
2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office

#hhh([`X[`Wa`(Ua_$(
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
i t d d to
intended
t be
b implanted
i
l t d iin th
the h
human b
body
d or tto supportt and/or
d/ maintain
i t i and
d sustain
t i
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

0 ;K 2.1
 

F7=;  

       
2013-07-31