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COGNITIVA 87
de l'intelligenee artificielle aux bioseienees
It intends to provide a forum for intensive discussions on c) Device physics of MSS, such as high-electron mobility
basic and material science, applied physics and device aspects transistor, quantum-well lasers and. other novel devices.
of modulated semiconductor structures (MSS), representative
of which are : The conference size will be limited to about 150 participants
with priorities given to those who are active in the field.
Superlattices, quantum wells, heterojunctions and other
engineered structures (including non semiconductors). Technical informations
All suggestions and requests for information should be
Its scope covers many aspects of MSS : forwarded to the Conference Secretary :
a) Epitaxial growth (MaE, OMCVPE),structural characterization Prof. J. L. R O B E R T
(TEM, XRAVS. . . . ), device processing of MSS, etc. Groupe d'Etude des Semiconducteurs
b) Electronic, optical and other unique properties of MSS U.S.T.L.
relevant to devices and materials, such as band-offset studies, place Eugene Bataillon
luminescence studies, high-mobility effect. 34060 Montpellier Cedex, France