Transistor

2SC1573, 2SC1573A, 2SC1573B

Silicon NPN triple diffusion planer type

For high breakdown voltage general amplification

Unit: mm
For small TV video output
5.9±0.2 4.9±0.2
Complementary to 2SC1573 and 2SA879
■ Features

8.6±0.2
● High collector to emitter voltage VCEO.
● High transition frequency fT.
■ Absolute Maximum Ratings (Ta=25˚C) 0.7±0.1

+0.3
0.7–0.2
Parameter Symbol Ratings Unit
2.54±0.15

13.5±0.5
2SC1573 250
Collector to
2SC1573A VCBO 300 V
base voltage
2SC1573B 400
2SC1573 200
Collector to +0.2 +0.2
2SC1573A VCEO 300 V 0.45–0.1 0.45–0.1
emitter voltage 1.27 1.27
2SC1573B 400
1:Emitter
Emitter to base voltage VEBO 7 V 1 2 3
2:Collector

3.2
3:Base
Peak collector current ICP 100 mA EIAJ:SC–51
Collector current IC 70 mA TO–92L Package

Collector power dissipation PC 1 W

Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 12V, IE = 0 2 µA
2SC1573 200
Collector to emitter
2SC1573A VCEO IC = 100µA, IB = 0 300 V
voltage
2SC1573B 400
2SC1573 5
Emitter to base
2SC1573A VEBO IE = 1µA, IC = 0 V
voltage 7
2SC1573B
Forward current transfer ratio hFE* VCE = 10V, IC = 5mA 30 220
Collector to emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA 1.2 V
Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz 50 80 MHz
2SC1573 5 10
Collector output
2SC1573A Cob VCB = 10V, IE = 0, f = 1MHz pF
capacitance 4 8
2SC1573B
*h Rank classification
FE

Rank P Q R
hFE 30 ~ 100 60 ~ 150 100 ~ 220
*2SC1573 for Ranks Q and R only

1
Transistor 2SC1573, 2SC1573A, 2SC1573B

PC — Ta IC — VCE IC — VBE
1.2 120 120
1.8mA Ta=25˚C VCE=10V
1.6mA
Collector power dissipation PC (W)

IB=2mA 25˚C
1.0 100 1.4mA 100

Collector current IC (mA)

Collector current IC (mA)

1.2mA
1.0mA Ta=75˚C –25˚C
0.8 80 80
0.8mA

0.6mA
0.6 60 60
0.4mA

0.4 40 40
0.2mA

0.2 20 20

0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

IC — IB VCE(sat) — IC IB — VBE
120 100 3.0
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10
VCE=10V VCE=10V
Ta=25˚C Ta=25˚C
30
100 2.5
Collector current IC (mA)

10

Base current IB (mA)

80 2.0
3

60 1 1.5

Ta=75˚C
0.3 25˚C
40 1.0

0.1 –25˚C
20 0.5
0.03

0 0.01 0
0 0.4 0.8 1.2 1.6 2.0 0.1 0.3 1 3 10 30 100 0 0.2 0.4 0.6 0.8 1.0
Base current IB (mA) Collector current IC (mA) Base to emitter voltage VBE (V)

hFE — IC fT — I E Cob — VCB

360 160 10
VCE=10V VCB=10V IE=0
Collector output capacitance Cob (pF)

Ta=25˚C 9 f=1MHz
140
Forward current transfer ratio hFE

Ta=25˚C
Transition frequency fT (MHz)

300
8
120
7
240
100
6

180 80 5
Ta=75˚C
4
25˚C 60
120
3
–25˚C 40
2
60
20
1

0 0 0
0.1 0.3 1 3 10 30 100 –1 –3 –10 –30 –100 1 3 10 30 100
Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V)

2
Transistor 2SC1573, 2SC1573A, 2SC1573B

ICBO — Ta IEBO — Ta Area of safe operation (ASO)

104 104 1000
VCB=250V VEB=5V Single pulse
Ta=25˚C
300

ICP

Collector current IC (A)

103 103 100 t=10ms
IC
ICBO (Ta=25˚C)

ICEO (Ta=25˚C)
t=1ms
30
ICBO (Ta)

ICEO (Ta)
DC

102 102 10

10 10 1

0.3

1 1 0.1
0 40 80 120 160 200 0 40 80 120 160 200 1 3 10 30 100 300 1000
Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V)