Chapitre 1

Modles pour les dispositifs

bipolaires et MOS
1.1. Rlations fondamentales pour le transistor
bipolaire
1.1.1. Signal fort, rgime actif normal
Le rlation entre i
c
et v
BE
:
th
BE
th
BE
V
v
S
V
v
S c
e I 1 e I i










= == =
Leffet Early:








+ ++ + = == =
A
CE
V
v
S c
V
v
1 e I i
th
BE
v
CE
i
C
v
BE
=ct.
-V
A
1.1.1. Signal fort, rgime actif normal
1.1.2. Les modles du transistor bipolaire en petit signal
dans la rgime actif normale
1.1.2. Les modles du transistor bipolaire en petit signal
dans la rgime actif normale
Le modl dun transistor bipolaire en petit signal est prsent
dansla figure suivante:
E

C

g
m
v
be
r
o
r

C

v
be
B

C

r

Conductance de transfert:
BE
C
m
V
I
g


= == =









th
BE
S C
V
V
I I exp
C
th
C
th th
BE
S m
I 40
V
I
V
1
V
V
I g = == =








= == = exp
Rsistance de sortie:
CE
C
o
o
V
I
1
g
1
r


= == = = == =








+ ++ +








= == =
A
CE
th
BE
S C
V
V
1
V
V
I I exp
C
A
A th
BE
S
o
I
V
V
1
V
V
I
1
r








= == =
exp
Rsistance r

:
m B
BE
g i
v
r


= == =


= == =
Rsistance r

:
O O
C
CE
r K
i
v
r

= == =


= == =
Un schma quivalent plus complet:

E

C

g
m
v
be
r
o
r

C

v
be
B

C

r

r
e
C
CS
r
b
r
c





k 100
mA 1
V 100
I
V
r
k 5 2
V mA 40
100
g
r
V mA 40 I 40 g
V 100 V 100 mA 1 I
C
A
o
m
C m
A C
= == = = == = = == =
= == = = == = = == =
= == = = == =
= == = = == = = == =
.
/
/
, ,
Exemple:
1.2. Rlations fondamentales pour le transistor MOS
1.2.1. Signal fort
Symboles:
Notations:
G = porte
D = drain
S =source
B =substrat
W =largeur de canal
L =longueur de canal
(ouW/L =facteur daspect)
K =paramtre de transconductance
V
T
=tension de seuil
V
GS
= tension de porte-source
V
DS
=tension de drain-source
NMOS PMOS
S
G
D
D
G
S
B
B
1.2.1. Signal fort
I. Rgion du fort inversion
a. Saturation
b. Rgion linare
T GS
V V > >> >
T GS DSsat DS
V V V V = == =
( (( ( ) )) )
2
T GS D
V V
2
K
I = == =
( (( ( ) )) )
DS
DS
T GS D
V
2
V
V V K I






= == =
DSsat DS
V V < << <
L
W
C
L
W
K K
ox n
= == = = == = '
II. Rgion du faible inversion
T GS
V V < << <








= == =
th
T GS
0 D D
nV
V V
L
W
I I exp
( (( ( ) )) )








= == =
th
T GS
th
0 D T GS
nV
V V
nV
1
L
W
I V V K exp
( (( ( ) )) )








= == =
th
T GS
0 D
2
T GS
nV
V V
L
W
I V V
2
K
exp

th
T GS
nV
2
V V
= == =

( (( ( ) )) )
2
0 D
2
th
e
L
W
I nV 2
2
K
= == =

th T GS
nV V V + ++ + = == =
2
2
th
0 D
e
nV 2 K
I
) ( '
= == =
. .i f
D
sat
D
I I = == =
. .i f
GS
D
sat
GS
D
V
I
V
I


= == =


Caractristiques de sortie du transistor MOS
Effets secondaires:
a. Modulation de longueur du canal
b. Dgradation de mobilit
c. Effet de substrate
( (( ( ) )) ) ( (( ( ) )) )
DS
2
T GS D
V 1 V V
2
K
I + ++ + = == =
) )]( ( [
DS D T GS G
0
V 1 V V 1
K
K
+ ++ + + ++ +
= == =
( (( ( ) )) ) + ++ + = == =
BS 0 T T
V V V
Modulation de longueur du canal
I
1.2.2. Modle du transistor MOS en petit signal
GS
D
m
V
I
g


= == =
DS
D
ds
ds
V
I
1
g
1
r


= == = = == =

v
gs S

D

G

g
m
v
gs
r
ds
( (( ( ) )) )
T GS
GS
D
m
V V K
V
I
g


= == =
( (( ( ) )) )
K
I 2
V V V V
2
K
I
D
T GS
2
T GS D
= == = = == =
D m
KI 2 g = == =
( (( ( ) )) )
D
2
T GS
DS
D
ds
I
1
V V
2
K
1
V
I
1
r




= == =


= == =
1.2.2. Modle du transistor MOS en petit signal
Exemple



M 1
I
1
r
V mA 1 KI 2 g
V A 10 5 K V 10 mA 1 I
D
ds
D m
2 4 1 3
D
= == = = == =
= == = = == =
= == = = == = = == =

/
/ , ,
Modle pour haute frquence
1.3. Rsistances dinamiques
1.3. Rsistances dinamiques
Rsistance dans la base
R
1 R
2
Q

r
o
r

v
BE
g
m
v
BE
R
B
R
2
R
1
i
X
v
X
B

E

C

( (( ( ) )) )
1 x x x
R i 1 r i v + ++ + + ++ + = == =

( (( ( ) )) )
1
x
x
B
R 1 r
i
v
R + ++ + + ++ + = == = = == =


R
1
R
2
Q

r
o
r

v
BE
g
m
v
BE
R
E
R
2
R
1
i
X
v
X
B

E

C

1
r R
R
1
E
+ ++ +
+ ++ +
= == =


Rsistance dans lmetteur
Rsistance dans le collecteur

R
1
R
2
Q

r
o
r

v
BE
g
m
v
BE
R
C
R
2
R
1
i
X
v
X
B

C

E









+ ++ + + ++ +
+ ++ + = == =
2 1
2
o C
R R r
R
1 r R


R
1 R
2
Q

r
ds
v
GS
g
m
v
GS
R
G
R
2
R
1
i
X
v
X
G

S

D

= == =
G
R
Rsistance dans la porte
Rsistance dans la source

R
1
R
2
Q

r
ds
v
GS
g
m
v
GS
R
S
R
2
R
1
i
X
v
X
G

S

D

= == =
x m gs m x
v g v g i
m x
x
S
g
1
i
v
R = == = = == =
Rsistance dans la drain

R
1
R
2
Q

r
ds
v
GS
g
m
v
GS
R
D
R
2
R
1
i
X
v
X
G

D

S

( (( ( ) )) )
2 x ds gs m x x
R i r v g i v + ++ + = == =
2 x gs
R i v = == =
( (( ( ) )) ) ( (( ( ) )) )
2 m ds 2 2 m ds
x
x
D
R g 1 r R R g 1 r
i
v
R + ++ + + ++ + + ++ + = == = = == =