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35 DSA 35 DS 35 DSAI 35 DSI

35

DSA 35

DS

35

DSAI 35

DSI

Rectifier Diode Avalanche Diode

V RSM

V (BR)min

V RRM

V R S M V ( B R ) m i n ① V R R

Anode

V R S M V ( B R ) m i n ① V R R

Cathode

V

V

V

on stud

on stud

900

-

800

DS 35-08A

DSI 35-08A

1300

-

1200

DS 35-12A

DSI 35-12A

1300

1300

1200

DSA 35-12A

DSAI 35-12A

1700

1750

1600

DSA 35-16A

DSAI 35-16A

1900

1950

1800

DSA 35-18A

DSAI 35-18A

Only for Avalanche Diodes

Symbol Test Conditions

Maximum Ratings

V RRM = 800-1800 V

I F(RMS) = 80 A

I F(AV)M = 49 A

DO-203 AB C A DS DSA A C 1/4-28UNF
DO-203 AB
C
A
DS
DSA
A
C
1/4-28UNF

A = Anode

C = Cathode

DSI

DSAI

I

F(RMS)

T

VJ

= T VJM

80

A

I

F(AVM)

T case = 100 C; 180 sine

 

49

A

P RSM

DSA(I) types, T VJ = T VJM , t p = 10 s

 

11

kW

I FSM

T VJ

= 45 C; = 0

t = 10 ms

(50 Hz), sine

650

A

V R

t = 8.3 ms (60 Hz), sine

 

690

A

T VJ

= T VJM

t = 10 ms

(50 Hz), sine

600

A

V R

= 0

t = 8.3 ms (60 Hz), sine

 

640

A

I 2 t

T VJ

= 45 C = 0

t = 10 ms

(50 Hz), sine

2100

A 2 s A 2 s

V R

t = 8.3 ms (60 Hz), sine

 

2000

T VJ

= T VJM

t = 10 ms

(50 Hz), sine

1800

A 2 s A 2 s

V R

= 0

t = 8.3 ms (60 Hz), sine

 

1700

T

VJ

-40

+180

C

T

VJM

180

C

T

stg

-40

+180

C

M d

Mounting torque

 

4.5-5.5

Nm

 

40-49

lb.in.

Weight

15

g

Symbol

Test Conditions

 

Characteristic Values

I R

T VJ

= T VJM ; V R = V RRM

 

4

mA

V F

I F

= 150 A; T VJ = 25 C

 

1.55

V

V T0

For power-loss calculations only

 

0.85

V

r T

T VJ

= T VJM

4.5

m

R

thJC

DC current

 

1.05

K/W

R

thJH

DC current

1.25

K/W

d

S

Creepage distance on surface Strike distance through air

 

4.05

mm

d

A

3.9

mm

a

Max. allowable acceleration

 

100

m/s 2

Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions

Features

International standard package, JEDEC DO-203 AB (DO-5)

Planar glassivated chips

Applications

High power rectifiers

Field supply for DC motors

Power supplies

Advantages

Space and weight savings

Simple mounting

Improved temperature and power cycling

Reduced protection circuits

Dimensions in mm (1 mm = 0.0394")

cycling ● Reduced protection circuits Dimensions in mm (1 mm = 0.0394") © 2000 IXYS All
35 DSA 35 DS 35 DSAI 35 DSI

35

DSA 35

DS

35

DSAI 35

DSI

250 A typ. lim. 200 I F 150 T VJ = 180°C 25°C T VJ
250
A
typ.
lim.
200
I
F
150
T VJ = 180°C
25°C
T VJ =
100
50
0
0.5
1.0
1.5
2.0 V
1000 50Hz, 80% V RRM 900 A 800 700 I FSM 600 T VJ =
1000
50Hz,
80% V RRM
900
A
800
700
I FSM
600
T VJ = 45°C
500
400
T
180°C
300
VJ =
200
100
0
10 -3
10 -2
10 -1
s 10
0
t V F Fig. 1 Forward characteristics Fig. 2 Surge overload current I FSM :
t
V F
Fig. 1 Forward characteristics
Fig. 2 Surge overload current
I FSM : crest value, t: duration
100
W
R thJA :
80
1.5
K/W
P F
1.9
K/W
60
2.3
K/W
3.9
K/W
40
DC
180° sin
120°
20
60°
30°
0
0 20 40 60 80 A 00 50 100 150 °C 200 I F(AV)M T
0
20
40
60
80 A
00
50
100
150
°C
200
I F(AV)M
T amb
Fig. 4 Power dissipation versus forward current and ambient temperature
2.0
K/W
1.6
Z thJH
1.2
0.8
0.4
0.0
10 -3
10 -2
10 -1
10 0
10 1
s
10 2

t

Fig. 6 Transient thermal impedance junction to heatsink

10000 V R = 0 V 8000 s A 2 6000 I 2 t 4000
10000
V R = 0 V
8000 s
A 2
6000
I 2 t
4000
2000
T VJ = 45°C
T VJ = 180°C
1000
1
2
3
4
5
6 78910 ms
t
Fig. 3 I 2 t versus time (1-10 ms)
60 A 50 I F(AV)M 40 30 20 10 0 0 40 80 120 160
60
A
50
I
F(AV)M
40
30
20
10
0
0
40
80
120
160
°C
200
T c
ase

Fig. 5 Max. forward current at case temperature 180° sine

R thJH for various conduction angles d:

d

R thJH (K/W)

DC

1.25

180

1.37

120

1.47

60

1.74

30

2.08

Constants for Z thJH calculation:

i

R thi (K/W)

t i (s)

1

0.10

0.0012

2

0.25

0.1181

3

0.70

0.6540

4

0.20

2.0