BSC093N15NS5

MOSFET
OptiMOSTM5Power-Transistor,150V SuperSO8

8 5
6
Features 7
6 7
8
5
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Verylowreverserecoverycharge(Qrr)
•150°Coperatingtemperature 1 4
3
•Pb-freeleadplating;RoHScompliant 2
3
2
1
•QualifiedaccordingtoJEDEC1)fortargetapplication 4
•Idealforhigh-frequencyswitchingandsynchronousrectification

Table1KeyPerformanceParameters S1 8D
Parameter Value Unit S2 7D
VDS 150 V
S3 6D
RDS(on),max 9.3 mΩ
G4 5D
ID 87 A
Qrr 58 nC

Type/OrderingCode Package Marking RelatedLinks

BSC093N15NS5 PG-TDSON-8 093N15NS -

1)
J-STD20 and JESD22
Final Data Sheet 1 Rev.2.2,2016-06-10
 OptiMOSTM5Power-Transistor,150V
BSC093N15NS5

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Final Data Sheet 2 Rev.2.2,2016-06-10

 OptiMOSTM5Power-Transistor,150V
BSC093N15NS5

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 87 TC=25°C
Continuous drain current ID A
- - 55 TC=100°C
Pulsed drain current1) ID,pulse - - 348 A TC=25°C
Avalanche energy, single pulse 2)
EAS - - 130 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 139 W TC=25°C
IEC climatic category;
Operating and storage temperature Tj,Tstg -55 - 150 °C
DIN IEC 68-1: 55/150/56

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - 0.54 0.9 K/W -
Thermal resistance, junction - ambient,
RthJA - - 50 K/W -
6 cm2 cooling area3)

3Electricalcharacteristics

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 150 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 3.0 3.8 4.6 V VDS=VGS,ID=107µA
- 0.1 1 VDS=120V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=120V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V
- 7.9 9.3 VGS=10V,ID=44A
Drain-source on-state resistance RDS(on) mΩ
- 8.7 10.5 VGS=8V,ID=22A
Gate resistance4) RG - 0.9 1.4 Ω -
Transconductance gfs 34 67 - S |VDS|>2|ID|RDS(on)max,ID=44A

1)
See Diagram 3 for more detailed information
2)
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
4)
Defined by design. Not subject to production test
Final Data Sheet 3 Rev.2.2,2016-06-10
 OptiMOSTM5Power-Transistor,150V
BSC093N15NS5

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance1) Ciss - 2430 3230 pF VGS=0V,VDS=75V,f=1MHz
Output capacitance 1)
Coss - 604 803 pF VGS=0V,VDS=75V,f=1MHz
Reverse transfer capacitance1) Crss - 15 26 pF VGS=0V,VDS=75V,f=1MHz
VDD=75V,VGS=10V,ID=44A,
Turn-on delay time td(on) - 14 - ns
RG,ext=3Ω
VDD=75V,VGS=10V,ID=44A,
Rise time tr - 4.3 - ns
RG,ext=3Ω
VDD=75V,VGS=10V,ID=44A,
Turn-off delay time td(off) - 14.4 - ns
RG,ext=3Ω
VDD=75V,VGS=10V,ID=44A,
Fall time tf - 3.8 - ns
RG,ext=3Ω

Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 14 - nC VDD=75V,ID=44A,VGS=0to10V
Gate to drain charge 1)
Qgd - 6.8 10.2 nC VDD=75V,ID=44A,VGS=0to10V
Switching charge Qsw - 13.4 - nC VDD=75V,ID=44A,VGS=0to10V
Gate charge total 1)
Qg - 33 40.7 nC VDD=75V,ID=44A,VGS=0to10V
Gate plateau voltage Vplateau - 5.7 - V VDD=75V,ID=44A,VGS=0to10V
Output charge 1)
Qoss - 91 121 nC VDD=75V,VGS=0V

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continous forward current IS - - 87 A TC=25°C
Diode pulse current IS,pulse - - 348 A TC=25°C
Diode forward voltage VSD - 0.88 1.2 V VGS=0V,IF=44A,Tj=25°C
Reverse recovery time 1)
trr - 49 98 ns VR=75V,IF=44,diF/dt=100A/µs
Reverse recovery charge 1)
Qrr - 58 116 nC VR=75V,IF=44,diF/dt=100A/µs

1)
Defined by design. Not subject to production test
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.2,2016-06-10
 OptiMOSTM5Power-Transistor,150V
BSC093N15NS5

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
160 90

140 80

70
120

60
100

50
Ptot[W]

ID[A]
80
40

60
30

40
20

20 10

0 0
0 50 100 150 200 0 50 100 150 200
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100

1 µs

0.5
102
10 µs

100 µs
0.2
1
10
ZthJC[K/W]
ID[A]

0.1
10-1
1 ms
0.05
0
10
10 ms 0.02

DC 0.01
10-1
single pulse

10-2 10-2
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 5 Rev.2.2,2016-06-10

 OptiMOSTM5Power-Transistor,150V
BSC093N15NS5

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
360 20

10V 5.5 V
320
6V
8V
280 6.5 V
15
7V
240

RDS(on)[mΩ]
200 8V
ID[A]

10 10 V
160 7V

120
6.5 V
5
80
6V
40
5.5 V

0 0
0 1 2 3 4 5 6 7 0 40 80 120 160 200 240 280 320
VDS[V] ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance
200 140

180
120
160

140 100

120
80
gfs[S]
ID[A]

100

60
80

60 40

40
20
20 175 °C 25 °C

0 0
0 2 4 6 8 10 0 20 40 60 80 100 120 140 160
VGS[V] ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj gfs=f(ID);Tj=25°C

Final Data Sheet 6 Rev.2.2,2016-06-10

 OptiMOSTM5Power-Transistor,150V
BSC093N15NS5

Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage
20 5.0

4.5

1070 µA
4.0
15
107 µA
3.5

3.0
max
RDS(on)[mΩ]

VGS(th)[V]
10 2.5
typ
2.0

1.5
5
1.0

0.5

0 0.0
-60 -20 20 60 100 140 -60 -20 20 60 100 140
Tj[°C] Tj[°C]
RDS(on)=f(Tj);ID=44A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 103
25 °C
150 °C
Ciss 25°C max
150°C max

Coss
103

102
C[pF]

IF[A]

102

Crss

101

101

100 100
0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 7 Rev.2.2,2016-06-10

 OptiMOSTM5Power-Transistor,150V
BSC093N15NS5

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 10

75 V
8

25 °C
30 V 120 V
100 °C
6
125 °C

VGS[V]
IAS[A]

101

100 0
100 101 102 103 0 10 20 30 40
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=44Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms

160

155
VBR(DSS)[V]

150

145

140
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 8 Rev.2.2,2016-06-10

 OptiMOSTM5Power-Transistor,150V
BSC093N15NS5

5PackageOutlines

Figure1OutlinePG-TDSON-8,dimensionsinmm

Final Data Sheet 9 Rev.2.2,2016-06-10

 OptiMOSTM5Power-Transistor,150V
BSC093N15NS5

RevisionHistory
BSC093N15NS5

Revision:2016-06-10,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2015-10-09 Release of final version
2.1 2016-01-22 Update diagram 13
2.2 2016-06-10 Update trr and Qrr

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Final Data Sheet 10 Rev.2.2,2016-06-10

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